inchange semiconductor isc product specification isc silicon npn power transistor BUF410 description high voltage high speed switching applications designed for use in high-frequency power supplies and motor control applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cev collector-emitter voltage v be = -1.5v 850 v v ceo collector-emitter voltage 450 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 30 a i b b base current-continuous 3 a i bm base current-peak 4.5 a p c collector power dissipation @t c =25 125 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUF410 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0; l= 25mh 450 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce( sat )-1 collector-emitter saturation voltage i c = 5a; i b = 0.5a b 0.8 v v ce( sat )-2 collector-emitter saturation voltage i c = 10a; i b = 2a 0.5 v v be( sat )-1 base-emitter saturation voltage i c = 5a; i b = 0.5a b 0.9 v v be( sat )-2 base-emitter saturation voltage i c = 10a; i b = 2a 1.1 v i cer collector cutoff current v ce =v cev ; r be = 100 v ce =v cev ; r be = 100 ;t c =100 0.2 1.0 ma i cev collector cutoff current v ce = v cev ; v be = -1.5v v ce = v cev ; v be = -1.5v;t c =100 0.2 1.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma switching times; resistive load t s storage time 0.8 s t f fall time i c = 5a;i b1 = 0.5a;v cc = 50v; v bb = -5v, r bb = 1.2 ;l= 0.5mh v clamp = 400v 0.05 s isc website www.iscsemi.cn
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